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 TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Silicon Phototransistor
Description
TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
TEMT1000
TEMT1020
TEMT1030
Features
* High photo sensitivity * Fast response times * Angle of half sensitivity = 15
TEMT1040
16757
* Daylight filter matched to IR Emitters ( = 870 nm to 950 nm) * Versatile terminal configurations * Matched IR Emitter series: TSML1000 * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits IR Detector for Daylight application Photo interrupters Counter Encoder
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Emitter Collector Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t5s tp/T = 0.5, tp 10 ms Tamb 55 C Test condition Symbol VECO IC ICM Ptot Tj Tstg Tamb Tsd RthJA Value 5 50 100 100 100 - 40 to + 100 - 40 to + 85 < 260 400 Unit V mA mA mW C C C C K/W
Basic Characteristics
Tamb = 25 C, unless otherwise specified Tamb = 25 C, unless otherwise specified Parameter Collector Emitter Voltage Collector-emitter dark current Collector-emitter capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Test condition IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol VCEO ICEO CCEO p Min 70 1 3 15 950 200 Typ. Max Unit V nA pF deg nm
Document Number 81554 Rev. 1.5, 08-Mar-05
www.vishay.com 1
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Parameter Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Collector Light Current Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 Ee = 1 mW/cm2, = 950 nm, VCE = 5V Test condition Symbol 0.5 VCEsat ton toff fc Ica 2 2.0 2.3 180 7.0 Min Typ. 750 to 980 0.3 Max Unit nm V s s kHz mA
Typical Characteristics (Tamb = 25 C unless otherwise specified)
10 4
I CEO - Collector Dark Current ( nA ) C CEO - Collector Emitter Capacitance ( pF )
10 8 f = 1 MHz
10 3 V CE = 20 V 10 2
6
4
10 1
2 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V )
10 0 20
94 8304
40
60
80
100
Tamb - Ambient Temperature ( C )
94 8294
Figure 1. Collector Dark Current vs. Ambient Temperature
Figure 3. Collector Emitter Capacitance vs. Collector Emitter Voltage
8 V CE = 5 V R L = 100 = 950 nm
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 V CE = 5 V E e = 1 mW/cm 2 = 950 nm
t on / t off - Turn on / Turn off Time ( s )
2.0
I ca rel - Relative Collector Current
6
4 t off t on 0 0 2 4 6 8 10 12 14 I C - Collector Current ( mA )
2
94 8239
Tamb - Ambient Temperature ( C )
94 8293
Figure 2. Relative Collector Current vs. Ambient Temperature
Figure 4. Turn On/Turn Off Time vs. Collector Current
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Document Number 81554 Rev. 1.5, 08-Mar-05
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
0 10 20 30
Srel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8248
Figure 5. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81554 Rev. 1.5, 08-Mar-05
www.vishay.com 3
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Package Dimensions in mm TEMT1000
16104
Package Dimensions in mm TEMT1020
16105
www.vishay.com 4
Document Number 81554 Rev. 1.5, 08-Mar-05
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Package Dimensions in mm TEMT1030
16756
Package Dimensions in mm TEMT1040
16500
Document Number 81554 Rev. 1.5, 08-Mar-05
www.vishay.com 5
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors Reel Dimensions
18033
www.vishay.com 6
Document Number 81554 Rev. 1.5, 08-Mar-05
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors Taping TEMT1000
18089
Taping TEMT1020
18090
Document Number 81554 Rev. 1.5, 08-Mar-05
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TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors Taping TEMT1030
18091
Precautions For Use
1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 C to 35 C, R.H. 60 % 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 C to 35 C, R.H. 60 %, devices should be treated at 60C 5C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3
Reflow Solder Profile
260 240 220
Temperature ( C )
200 180 160 140 120 100 80 60 0
+ 5 C/s
- 5 C/s
60 s to 120 s 5s
20 40 60 80 100 120 140 160 180 200 220 Time ( s )
17172
www.vishay.com 8
Document Number 81554 Rev. 1.5, 08-Mar-05
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81554 Rev. 1.5, 08-Mar-05
www.vishay.com 9


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